MCH6421 no. a1264-1/4 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena1264 MCH6421 n-channel silicon mosfet general-purpose switching device applications sanyo semiconductors data sheet features low on-resistance. ultrahigh-speed switching. 1.8v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 12 v drain current (dc) i d 5.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% 22 a allowable power dissipation p d when mounted on ceramic substrate (1200mm 2 ? 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds =20v, v gs =0v 1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =2a 2.0 3.8 s r ds (on)1 i d =2a, v gs =4.5v 29 38 m static drain-to-source on-state resistance r ds (on)2 i d =1a, v gs =2.5v 43 61 m r ds (on)3 i d =0.5a, v gs =1.8v 69 99 m marking : kv continued on next page. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 70908pe ti im tc-00001490 www.datasheet.co.kr datasheet pdf - http://www..net/
MCH6421 no. a1264-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =10v, f=1mhz 410 pf output capacitance coss v ds =10v, f=1mhz 84 pf reverse transfer capacitance crss v ds =10v, f=1mhz 59 pf turn-on delay time t d (on) see specified test circuit. 7.5 ns rise time t r see specified test circuit. 26 ns turn-off delay time t d (off) see specified test circuit. 38 ns fall time t f see specified test circuit. 32 ns total gate charge qg v ds =10v, v gs =4.5v, i d =5.5a 5.1 nc gate-to-source charge qgs v ds =10v, v gs =4.5v, i d =5.5a 0.7 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =4.5v, i d =5.5a 1.7 nc diode forward voltage v sd i s =5.5a, v gs =0v 0.8 1.2 v package dimensions switching time test circuit unit : mm (typ) 7022a-009 1 : drain 2 : drain 3 : gate 4 : source 5 : drain 6 : drain sanyo : mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 pw=10 s d.c. 1% p. g 50 g s d i d =2a r l =5 v dd =10v v out MCH6421 v in 4.5v 0v v in i d -- v ds i d -- v gs drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v 0 0 0.5 3.0 2.0 4.0 1.5 1.0 3.5 2.5 4.5 0 2.5 1.5 3.5 1.0 0.5 3.0 2.0 4.5 4.0 1.0 0.8 0.6 0.1 0.2 0.4 0.9 0.7 0.3 0.5 it13836 00.4 0.2 1.4 0.8 1.6 1.0 1.2 0.6 1.8 it13837 ta= 75 c -- 2 5 c v ds =10v 2.0v 4.5v 25 c v gs =1.2v 1.5v 1.8v 2.5v 3.5v 8.0v www.datasheet.co.kr datasheet pdf - http://www..net/
MCH6421 no. a1264-3/4 i s -- v sd ? y fs ? -- i d forward transfer admittance, ? y fs ? -- s drain current, i d -- a source current, i s -- a diode forward voltage, v sd -- v sw time -- i d ciss, coss, crss -- v ds a s o v gs -- qg drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc gate-to-source voltage, v gs -- v switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain-to-source voltage, v ds -- v r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v ambient temperature, ta -- c 01 3 26 45 0 0.5 3.0 2.0 1.5 1.0 4.0 3.5 2.5 4.5 it13853 v ds =10v i d =5.5a it13840 it13842 7 100 5 5 3 2 7 10 5 3 2 2 7 3 23 0.01 10 1.0 35 2 7 2 0.1 357 57 t d (on) t d (off) t f t r v dd =10v v gs =4.5v 0.01 1.0 0.1 23 57 2 1.0 357 235 2 5 3 7 0.1 2 7 5 3 v ds =10v 25 c ta= -- 2 5 c 75 c 06 20 10 14 18 4812 216 1000 100 5 3 7 3 5 7 2 it13843 ciss coss crss f=1mhz it13841 0.2 0.4 0.6 0.8 0.3 0.5 0.7 0.9 1.0 0.01 0.1 1.0 7 5 3 2 7 5 3 2 3 2 7 5 v gs =0v --25 c 25 c ta= 75 c it13839 01 3 5 10 7 24689 it13838 120 0 30 10 20 40 60 90 50 70 80 100 110 110 0 20 10 40 30 50 70 90 60 80 100 ta=25 c --60 --40 --20 0 20 40 60 80 100 120 140 160 v gs =1.8v, i d =0.5a i d =0.5a 2.0a 1.0a v gs =2.5v, i d =1.0a v gs =4.5v, i d =2.0a r ds (on) -- ta it13854 2 3 5 7 2 3 5 7 2 5 3 0.1 10 2 3 5 7 1.0 0.01 2 23 57 23 57 1.0 2 357 10 0.01 0.1 operation in this area is limited by r ds (on). 100ms 100 s 10m s dc operation (ta=25 c ) 1ms 3 i dp =22a i d =5.5a pw 10 s ta=25 c single pulse when mounted on ceramic substrate (1200mm 2 ? 0.8mm) www.datasheet.co.kr datasheet pdf - http://www..net/
MCH6421 no. a1264-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps note on usage : since the MCH6421 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w 0 0 20 40 0.2 0.4 1.6 0.6 1.0 1.4 1.5 0.8 1.2 60 80 100 120 140 160 it13855 when mounted on ceramic substrate (1200mm 2 ? 0.8mm) this catalog provides information as of july, 2008. specifications and information herein are subject to change without notice. www.datasheet.co.kr datasheet pdf - http://www..net/
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